Tetraethylorthosilicate vapor treatment for eliminating surface sensitivity in tetraethylorthosilicate/O3 atmospheric-pressure chemical vapor deposition

Electrochemical and Solid-State Letters

Volumn 2, Issue 1, 1999, Pages 24-26

  Tsukamoto, Koji ^a,c   Cheng, Degang ^a   Komiyama, Hiroshi ^a   Nishimoto, Yuko ^b   Tokumasu, Noboru ^b   Maeda, Kazuo ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Semiconductor Process Laboratory   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; OXYGEN; SURFACE ROUGHNESS;

ATMOSPHERIC-PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); TETRAETHYLORTHOSILICATE VAPOR TREATMENT;

VLSI CIRCUITS;

EID: 0032734429     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390722     Document Type: Article

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