Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films

Journal of the Electrochemical Society

Volumn 147, Issue 4, 2000, Pages 1560-1567

  Simpson, Darrell L ^a   Croswell, Robert T ^a,c   Reisman, Arnold ^a   Williams, C Kenneth ^a,b   Temple, Dorota ^a,b  

^a North Carolina State University   (United States)

^b MCNC   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; AUGER ELECTRON SPECTROSCOPY; DECOMPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING GLASS; SEMICONDUCTOR DOPING; SILICA;

GEMANOSILICATE FILM; GERMANE; GLASS FILM; PHOSPHINE;

THIN FILMS;

EID: 0033733210     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393394     Document Type: Article

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