Growth kinetics and deposition-related properties of subatmospheric pressure chemical vapor deposited borophosphosilicate glass film

Journal of the Electrochemical Society

Volumn 146, Issue 8, 1999, Pages 3039-3051

  Vassiliev, Vladislav Y ^a   Zheng, Jia Zhen ^a   Tang, Shiau Khee ^b   Lu, Wei ^a   Hua, Ji ^a   Lin, Yih Shung ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MECHANICAL VARIABLES MEASUREMENT; OPTICAL MICROSCOPY; RATE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

BOROPHOSPHOSILICATE GLASS FILM; MOISTURE ABSORPTION; STRESS MEASUREMENT; SURFACE CHARGE ANALYSIS; SURFACE LASER SCANNING; X RAY FLUORESCENCE ANALYSIS;

BOROSILICATE GLASS;

EID: 0032592399     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392048     Document Type: Article

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