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Volumn 44, Issue 3, 2001, Pages 129-130+132+134+136

Trends in void-free pre-metal CVD dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING GLASS;

EID: 0035278655     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (20)

References (20)
  • 5
    • 0032592399 scopus 로고    scopus 로고
    • Growth kinetics and deposition-related properties of subatmospheric-pressure chemically vapor deposited borophosphosilicate glass films
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 3039
    • Vassiliev, V.1
  • 9
    • 0005324246 scopus 로고    scopus 로고
    • V.Y. Vassiliev, "An Analysis of Flow Properties of Chemically Vapor Deposited Borophosphosilicate Glass Films for ULSI Device Technology," Electrochemical Society Proceedings Volume "Interconnect and Contact Metallization for ULSI," PV 99-31 (in press)
  • 15
    • 0032655744 scopus 로고    scopus 로고
    • High aspect ratio trench filling using two-step subatmospheric chemical vapor deposited borophosphosilicate glass for ≤0.18μm device application
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 1884
    • Xia, L.-Q.1
  • 16
    • 0005328831 scopus 로고    scopus 로고
    • Gap-fill capability of subatmospheric pressure chemically vapor deposited TEOS-ozone doped glass film annealed at low thermal budget conditions
    • (2000) Proc. of 6th DUMIC Conf , pp. 181
    • Vassiliev, V.Y.1
  • 18
    • 0005350088 scopus 로고    scopus 로고
    • US patent pending, "Method of silicon oxide and silicon glass films deposition," filed USPTO, March 18
    • (1999)
    • Vassiliev1
  • 19
    • 0005266152 scopus 로고    scopus 로고
    • US patent pending, "Method of silicon oxide and silicon glass film deposition," filed USPTO, Dec. 13
    • (1999)
    • Vassiliev1    Sudijono2
  • 20
    • 0005285977 scopus 로고    scopus 로고
    • US patent pending, "Method of high-density plasma boron-containing silicate glass film deposition," filed USPTO, Jan. 27
    • (2000)
    • Vassiliev1    Sudijono2    Cuthbertson3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.