High temperature subatmospheric chemical vapor deposited undoped silicate glass. A solution for next generation shallow trench isolation

Journal of the Electrochemical Society

Volumn 146, Issue 3, 1999, Pages 1181-1185

  Xia, L Q ^a   Nemani, S ^a   Galiano, M ^a   Pichai, S ^a   Chandran, S ^a   Yieh, E ^a   Cote, D ^a   Conti, R ^a   Restaino, D ^a   Tobben, D ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; DIELECTRIC FILMS; ETCHING; OZONE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS;

TETRAETHYLORTHOSILICATE;

SEMICONDUCTING GLASS;

EID: 0033096667     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391742     Document Type: Article

References (20)