On the mechanism of silicon nitride chemical vapor deposition from dichlorosilane and ammonia

Journal of the Electrochemical Society

Volumn 146, Issue 11, 1999, Pages 4203-4212

  Korkin, Anatoli A ^a   Cole, J Vernon ^a   Sengupta, Debasis ^b   Adams, James B ^b  

^a MOTOROLA INC   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMMONIA; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; FILM GROWTH; RATE CONSTANTS; SILANES;

DENSITY FUNCTIONAL THEORY; QUANTUM RICE-RAMSPERGER-KASSEL THEORY; TRANSITION STATE THEORY;

SILICON NITRIDE;

EID: 0033312887     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392615     Document Type: Article

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