Irregular surface and porous structure of SiO2 films deposited at low temperature and low pressure

Journal of the Electrochemical Society

Volumn 145, Issue 7, 1998, Pages 2569-2572

  Dultsev, F N ^a   Nenasheva, L A ^a   Vasilyeva, L L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE EFFECTS; OXIDATION; POROUS MATERIALS; PRESSURE EFFECTS; SILICA; SURFACE STRUCTURE;

ADSORPTION POROMETRY;

DIELECTRIC FILMS;

EID: 0032122793     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838681     Document Type: Article

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