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Journal of Applied Physics

Volumn 102, Issue 3, 2007, Pages

Growth and characterization of InAs columnar quantum dots on GaAs substrate

(4) Li, L H a Patriarche, G b Rossetti, M a Fiore, A a

a EPFL (Switzerland)

b UNIV PARIS SUD (France)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURE; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

GAAS/INAS SUPERLATTICE; PHOTOLUMINESCENCE (PL) SPECTRUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34548081952 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2764212 Document Type: Article

Times cited : (33)

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