Growth interruption to tune the emission of InAs quantum dots embedded in InGaAs matrix in the long wavelength region

Journal of Crystal Growth

Volumn 261, Issue 4, 2004, Pages 458-465

  Convertino, Annalisa ^a   Cerri, Luciana ^a   Leo, Gabriella ^a   Viticoli, Sesto ^a  

^a CNR   (Italy)

Author keywords

A1. Surface processes; A3. Molecular beam epitaxy; B1. Nanomaterials

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL QUALITY; SURFACE PROCESSES;

SEMICONDUCTOR GROWTH;

EID: 0346393985     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.034     Document Type: Article

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