1.3-1.6 μm broadband polarization-independent luminescence by columnar InAs quantum dots on InP(001)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 11, 2006, Pages 3646-3651

  Kawaguchi, Kenichi ^a,b   Ekawa, Mitsuru ^a,b   Yasuoka, Nami ^a,b   Akiyama, Tomoyuki ^a,b   Ebe, Hiroji ^c,d   Sugawara, Mitsuru ^a,b   Arakawa, Yasuhiko ^c,d  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Optoelectronic Industry and Technology Development Association   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD BAND POLARIZATION; INAS QUANTUM DOTS; INGAASP; INTERNATIONAL CONFERENCES; LATERAL SIZES; LOW GROWTH TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; POLARIZATION-INDEPENDENT; POLARIZATION-INSENSITIVE SEMICONDUCTOR; QUANTUM DOTS; ROOM TEMPERATURES; SELF-ASSEMBLED;

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; INDIUM ARSENIDE; LIGHT AMPLIFIERS; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; POLARIZATION; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; TELECOMMUNICATION SYSTEMS; VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34548074338     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200671538     Document Type: Conference Paper

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