Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots

Journal of Electronic Materials

Volumn 29, Issue 5, 2000, Pages 535-541

  Yoon, Sukho ^a   Moon, Youngboo ^a   Lee, Tae Wan ^a   Hwang, Heedon ^a   Yoon, Euijoon ^a   Kim, Young Dong ^b   Lee, U K Hyun ^c   Lee, Donghan ^c   Kim, Hong Seung ^d   Lee, Jeong Yong ^d  

^a Seoul National University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Chungnam National University   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON TRANSITIONS; MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

FULL WIDTH AT HALF MAXIMUM (FWHM); SELF-ASSEMBLED QUANTUM DOTS; WAVELENGTH-INTEGRATED PEAK INTENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033752376     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0041-4     Document Type: Article

References (31)

1. M. Tabuchi, S. Noda, and A. Sasaki, Science and Technology of Mesoscopic Structures, ed. S. Namba, C. Hamaguchi, and T. Ando, (Tokyo: Springer-Verlag, 1992), p. 379; A. Sasaki, Thin Solid Films 267, 24 (1995).
2. M. Tabuchi, S. Noda, and A. Sasaki, Science and Technology of Mesoscopic Structures, ed. S. Namba, C. Hamaguchi, and T. Ando, (Tokyo: Springer-Verlag, 1992), p. 379; A. Sasaki, Thin Solid Films 267, 24 (1995).
3. D. Leonard, K. Pond, and P.M. Petroff, Phys. Rev. B 50, 11687 (1994); P.M. Petroff and S.P. DenBaars, Superlattice Microstruct. 15, 15 (1994) and references therein.
4. D. Leonard, K. Pond, and P.M. Petroff, Phys. Rev. B 50, 11687 (1994); P.M. Petroff and S.P. DenBaars, Superlattice Microstruct. 15, 15 (1994) and references therein.
5. H. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, Appl. Phys. Lett. 69, 3140 (1996).
6. Q. Xie, N.P. Kobayashi, T.R. Ramachandran, A. Kalburge, P. Chen, and A. Madhukar, J. Vac. Sci. Technol. B 14, 2203 (1996).
7. F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, F. Bertram, J. Christen, A. Kosogov, and P. Werner, J. Cryst. Growth 170, 568 (1997).
8. Z.M. Wang, S.L. Feng, X.P. Yang, Z.D. Lu, Z.Y. Xu, H.Z. Zheng, F.L. Wang, P.D. Han, and X.F. Duan, J. Cryst. Growth 192, 97 (1998).
9. H.-W. Ren, K. Nishi, S. Sugou, M. Sugisaki, and Y. Masumoto, Jpn. J. Appl. Phys. 36, 4118 (1997).
10. H. Lee, R. Lowe-Webb, T.J. Johnson, W. Yang, and P.C. Sercel, Appl. Phys. Lett. 73, 3556 (1998).
11. R.P. Mirin, J.P. Ibbstson, K. Nishi, A.C. Gossard, and J.E. Bowers, Appl. Phys. Lett. 67, 3795 (1995).
12. D.I. Lubyshev, P.P. Gonzalez-Borrer, E. Mareg, Jr., E. Petitprez, N. La Scala, Jr., and P. Basmaji, Appl. Phys. Lett. 68, 205 (1996).
13. L. Brusaferri et al., Appl. Phys. Lett. 69, 3354 (1996).
14. H. Lee, W. Yang, and P.C. Sercel, Phys. Rev. B 55, 9757 (1997).
15. K. Nukai, N. Ohtsuka, and M. Sugawara, Appl. Phys. Lett. 70, 2416 (1997).
16. R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, J. Electron. Mater. 28, 520 (1999).
17. S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J.L. Merz, P.M. Petroff, and J.E. Bowers, Surf. Sci. 361/362, 778 (1996).
18. A. Polimeni, A. Patane, M. Henini, L. Eaves, and P.C. Main, Phys. Rev. B 59, 5064 (1999).
19. M. Taskinen, M. Sopanen, H. Lpsanen, J. Tulkki, T. Tuomi, and J. Ahopelto, Surf. Sci. 376, 60 (1997).
20. H. Marchand, P. Desjardins, S. Guillon, J.-E. Paultre, Z. Bougrioua, R.Y.-F. Yip, and R.A. Masut, Appl. Phys. Lett. 71, 527 (1997).
21. N. Carlsson, T. Junno, L. Montelius, M.-E. Pistol, L. Samuelson, and W. Seifert, J. Cryst. Growth 191, 347 (1998).
22. S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y.D. Kim, Appl. Phys. Lett. 74, 2029 (1999).
23. S. Yoon, Y. Moon, T.-W. Lee, H. Hwang, E. Yoon, and Y.D. Kim, Thin Solid Films 357, 81 (1999).
24. T.R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, Appl. Phys. Lett. 70, 640 (1997); R. Heitz, T.R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen, and A. Madhukar, Phys. Rev. Lett. 78, 4071 (1997).
25. T.R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, Appl. Phys. Lett. 70, 640 (1997); R. Heitz, T.R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen, and A. Madhukar, Phys. Rev. Lett. 78, 4071 (1997).
26. J.M. Gerard, J.B. Genin, J. Lefebvre, J.M. Moison, N. Lebouche, and F. Barthe, J. Cryst. Growth 150, 351 (1995).
27. C. Priester and M. Lannoo, Phys. Rev. B 75, 93 (1995).
28. Y.P. Varshni, Phys. 34, 149 (1967).
29. Y.T. Dai, J.C. Fan, Y.F. Chen, R.M. Lin, S.C. Lee, and H.H. Lin, J. Appl. Phys. 82, 4489 (1997).
30. D. Bimberg, M. Sondergeld, and E. Grobe, Phys. Rev. B 4, 3451 (1971)
31. S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, U.H. Lee, and D. Lee (unpublished).