Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 217-221

  Saito, T ^a   Nakaoka, T ^b   Kakitsuka, T ^b,c   Yoshikuni, Y ^c   Arakawa, Y ^a,b,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

Electronic states; Stacked quantum dots; Strain

Indexed keywords

ELECTRONIC STRUCTURE; GROUND STATE; OPTICAL PROPERTIES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

DOT SPACING; ELECTRONIC STATES; STACKED QUANTUM DOTS; STRAIN DISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444273242     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.055     Document Type: Conference Paper

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