High-efficiency light-emitting diodes at ≈ 1.3 μm using InAs-InGaAs quantum dots

IEEE Photonics Technology Letters

Volumn 12, Issue 12, 2000, Pages 1601-1603

  Fiore, A ^a   Oesterle, U ^a   Stanley, R P ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EXTRACTION EFFICIENCY; HIGH INJECTION ELECTROLUMINESCENCE; INDIUM ARSENIDE QUANTUM DOTS; INDIUM GALLIUM ARSENIDE QUANTUM DOTS; INDIUM GALLIUM ARSENIDE QUANTUM WELL; LONG WAVELENGTH QUANTUM DOTS; PHOTOVOLTAGE SPECTROSCOPY;

SEMICONDUCTOR LASERS;

EID: 0034468111     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.896320     Document Type: Article

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