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Volumn 77, Issue 3, 2000, Pages 409-411

Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000505243     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126992     Document Type: Article
Times cited : (105)

References (20)
  • 14
    • 85037520510 scopus 로고    scopus 로고
    • note
    • -2.
  • 16
    • 85037520788 scopus 로고    scopus 로고
    • note
    • This In probably will he oxidized when exposed to air.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.