Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1510-1513

  Mirin, R P ^a   Silverman, K L ^a   Christensen, D H ^a   Roshko, A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; LIGHT EMISSION; MODAL ANALYSIS; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

BIMODAL DISTRIBUTIONS; FULL WIDTH AT HALF MAXIMUM (FWHM); SELF-ASSEMBLED QUANTUM DOTS; SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034187284     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591415     Document Type: Article

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