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Volumn 22, Issue 7, 2007, Pages 774-783

Charge trapping properties of ultra-thin TiO2 films on strained-Si

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DIELECTRIC FILMS; HETEROJUNCTIONS; MIS DEVICES; THERMAL EFFECTS; TITANIUM DIOXIDE; VOLTAGE CONTROL;

EID: 34547319707     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/017     Document Type: Article
Times cited : (8)

References (46)
  • 32
    • 23844443298 scopus 로고    scopus 로고
    • Electrical characterization, modeling and simulation of MOS structures with high-k gate stacks
    • Autran J L, Munteanu D and Houssa M 2004 Electrical characterization, modeling and simulation of MOS structures with high-k gate stacks High-k Gate Dielectrics ed M Houssa (Bristol: Institute of Physics Publishing)
    • (2004) High-k Gate Dielectrics
    • Autran, J.L.1    Munteanu, D.2    Houssa, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.