Correlation of the decay of tunneling currents with trap generation inside thin oxides

Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 655-660

  Dumin, N A ^a,c   Dickerson, K J ^a,c   Dumin, D J ^a   Moore, B T ^b  

^a South   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; SEMICONDUCTOR MATERIALS;

CONSTANT VOLTAGE STRESS TESTING; COULOMBIC REPULSION CENTERS; TRAP GENERATION; TUNNELING CURRENTS;

OXIDES;

EID: 0030150609     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00196-4     Document Type: Article

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