Analysis of defects in microcrystalline islands in amorphous silicon films with a Scanning Charge-Transient Microscope

Ultramicroscopy

Volumn 107, Issue 10-11, 2007, Pages 963-968

  Lanyi S ^a   Nadazdy V ^a  

^a INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

022, 040; Isothermal Charge Transient Spectroscopy; Metal oxide semiconductor capacitor; Scanning capacitance microscopy; Thin film transistor

Indexed keywords

ISOTHERMAL CHARGE-TRANSIENT SPECTROSCOPY; METAL OXIDE SEMICONDUCTOR CAPACITORS; SCANNING CAPACITANCE MICROSCOPY; VOLTAGE PULSES;

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CAPACITORS; FIELD EFFECT TRANSISTORS; MOS DEVICES; SCANNING TUNNELING MICROSCOPY; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

SILICON;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC POTENTIAL; FILM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY;

EID: 34447637604     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2007.04.014     Document Type: Article

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