Effect of photoenhanced minority carriers in metal-oxide-semiconductor capacitor studied by scanning capacitance microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2664-2668

  Shin, S ^a   Kye, J I ^a   Pi, U H ^a   Khim, Z G ^a   Hong, J W ^b   Park, Sang Il ^b   Yoon, S ^c  

^a Seoul National University   (South Korea)

^b PSIA Corporation   (South Korea)

^c The Catholic University of Korea   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; IRRADIATION; MICROSCOPIC EXAMINATION; PHOTOELECTRICITY; PHOTOVOLTAIC EFFECTS;

ELECTRON-HOLE PAIRS; SCANNING CAPACITANCE MICROSCOPE;

MOS CAPACITORS;

EID: 0034318263     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1326947     Document Type: Article

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