On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1643-1647

  Exarchos, M ^a   Dieudonne, F ^b   Jomaah, J ^b   Papaioannou, G J ^a   Balestra, F ^b  

^a UNIVERSITY OF ATHENS   (Greece)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; HOT CARRIERS; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRESSES;

CHARGE RECOMBINATION; DRAIN CURRENTS; HOT CARRIER STRESS; TRANSCONDUCTANCE DISPERSION;

MOSFET DEVICES;

EID: 4544224238     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.084     Document Type: Conference Paper

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