SCTS: Scanning capacitance transient spectroscopy

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 89-91

  Toth A L ^a   Dozsa L ^a   Gyulai, J ^a   Giannazzo, F ^b   Raineri, V ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; GOLD; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DOPING;

SCANNING CAPACITANCE MICROSCOPY (SCM); SCANNING CAPACITANCE TRANSIENT SPECTROSCOPY (SCTS);

SEMICONDUCTING SILICON;

EID: 0343026428     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00124-4     Document Type: Article

References (3)

1. Support Note No. 224, Rev. C., Digital Instruments. 1996.
2. 2 layer on Si by scanning capacitance microscopy. Appl Phys Lett. 74(13):1999;1815-1817.
3. Lang DV. In: Braunlich, P, editor. Thermally stimulated relaxation in solids. Berlin: Springer, 1979. p. 93-132.