Photoelectrochemical etching of inxGa1-xN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Cho, Hyun ^a   Donovan, S M ^a   Abernathy, C R ^a   Pearton, S J ^a   Ren, F ^a   Han, J ^b   Shul, R J ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ETCHING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOCHEMICAL REACTIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; THIN FILMS;

BANDGAP; GAN; PHOTOELECTROCHEMICAL ETCHING; UV PHOTO-ASSISTED ETCHING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3442879350     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003264     Document Type: Conference Paper

References (24)

1. see for example, C.B. Veirtuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, F. Ren, J.C. Zolper and R.J. Shul, Solid State Electron. 41 1947 (1997).
2. A. Shintani and S. Minagawa, J. Electrochem. Soc. 123 707 (1996).
3. T. Kozawa, T. Kachi, T. Ohwaki, Y. Tager, N. Koide and M. Koike, J. Electrochem. Soc. 143 L17 (1996).
4. D.A. Stocker, E.F. Schubert and J.M. Redwing, Appl. Phys. Lett. 73 2788 (1998).
5. B.J. Kim, J.W. Lee, H.S. Park, Y. Park and T.I. Kim, J. Electron. Mater. 27 L32 (1998).
6. J. R Mileham, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R.J. Shul and S.P. Kilcoyne, Appl. Phys. Lett. 67 1119 (1995).
7. J. R Mileham, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R.J. Shul and S.P. Kilcoyne, J. Vac. Sci. Technol. A14 836 (1996).
8. Q.X. Guo, O. Kato and A. Adesida, J. Electrochem. Soc. 139 2008 (1992).
9. C.B. Vartuli, S.J. Pearton, J.W. Lee, C.R. Abernathy, J.D. MacKenzie, J.C. Zolper, R.J. Shul and F. Ren, J. Electrochem. Soc. 143 3681 (1996).
10. J.S. Shor and R.M. Osgood, Jr., J. Electrochem. Soc. 140 L123 (1993).
11. M.J. Grove, D.A. Hudson, P.S. Zory, R.J. Dalby, C.M. Harding and A. Rosenberg, J. Appl. Phys. 76 587 (1994).
12. M.N. Ruberto, X. Zhang, R. Scarmozzino, A.E. Willner, D.V. Podlesnik, and R.M. Osgood, Jr., J. Electrochem. Soc. 138 1174 (1991).
13. R. Khare and E.L. Hu, J. Electrochem. Soc. 138 1516 (1991).
14. J. van de Ven and H.J.P. Nabben, J. Electrochem. Soc. 137 1603 (1990).
15. M.S. Minsky, M. White and E.L. Hu, Appl. Phys. Lett. 68 1531 (1996).
16. C. Youtsey, I. Adesida, L.T. Romano and G. Bulman, Appl. Phys. Lett. 72 560 (1998).
17. C. Youtsey, G. Bulman and I. Adesida, J. Electron. Mater. 27 282 (1998).
18. C. Youtsey, I. Adesida and G. Bulman, Appl. Phys. Lett. 71 2151 (1997).
19. R.T. Leonard and S.M. Bedair, Appl. Phys. Lett. 68 794 (1996).
20. C. Youtsey, I. Adesida and G. Bulman, Electron. Lett. 33 245 (1997).
21. L.-H. Peng, C.-W. Chuang, Y.-C. Hsu, J.-K. Ho, C.-N. Huang and C.-Y. Chen, IEEE J. Selected Topics in Quantum Electronics 4 564 (1998).
22. H. Lu, Z. Wu and I. Bhat, J. Electrochem. Soc. 144 L8 (1997).
23. L.-H. Peng, C.-W. Chuang, J.-K. Ho, C.N. Huang and C.-Y. Chen, Appl. Phys. Lett. 72 939 (1998).
24. J. O, P.S. Zory and D.P. Bour, SPIE Proc. 3002 117 (1997).