Hydration effects in the photoassisted wet chemical etching of gallium nitride

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 564-569

  Peng, Lung Han ^a,c,d,e   Chuang, C W ^a   Hsu, Y C ^a   Ho, J K ^b   Huang, C N ^b   Chen, C Y ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c HARVARD UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

GaN; Hydration effect; Wet etching

Indexed keywords

ETCHING; ETHANOL; HYDRATION; PH EFFECTS; POTASSIUM COMPOUNDS; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

PHOTOASSISTED WET CHEMICAL ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032067970     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704119     Document Type: Article

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