Dislocation core structures in GaN grown on Si(111) substrate

Philosophical Magazine Letters

Volumn 82, Issue 3, 2002, Pages 119-124

  Wang, D ^a   Ichikawa, M ^a   Yoshida, S ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; FILM GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ATOM COLUMN RING; BOND EXTENSION; DISLOCATION CORE STRUCTURES;

DISLOCATIONS (CRYSTALS);

EID: 0036507483     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/095008302317262615     Document Type: Article

References (12)