Reactive etching of SiC by energetic CF3: Molecular dynamics simulation

EPJ Applied Physics

Volumn 38, Issue 2, 2007, Pages 129-134

  Gou, F ^a,b   Chen, Z ^b   Zhiqian, C ^a  

^a SOUTHWEST UNIVERSITY   (China)

^b GUIZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; MOLECULAR DYNAMICS; REACTIVE ION ETCHING; SUBSTRATES; SURFACE STRUCTURE;

CARBON-RICH SURFACE; REACTION LAYER;

SILICON CARBIDE;

EID: 34250808489     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2007058     Document Type: Article

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