Room-temperature deposition of a-SiC:H thin films by ion-assisted plasma-enhanced CVD

Thin Solid Films

Volumn 283, Issue 1-2, 1996, Pages 109-118

  Kim, Dong S ^a   Lee, Young H ^a  

^a Drexel University   (United States)

Author keywords

Amorphous materials; Chemical vapour deposition; Plasma processing and deposition; Silicon carbide

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CROSSLINKING; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BOMBARDMENT; IONIZATION; PLASMA APPLICATIONS; SILICON CARBIDE; SUBSTRATES; THIN FILMS;

HYDROGENATED AMORPHOUS SILICON CARBIDE; IMPEDANCE ANALYSIS; ION ASSISTED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ION ENERGY FLUX; PLASMA REACTOR; ROOM TEMPERATURE DEPOSITION;

AMORPHOUS FILMS;

EID: 0030234848     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08820-7     Document Type: Article

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