Electrical characteristics of postmetallization-annealed MOCVD- TiO2 films on ammonium sulfide-treated GaAs

Journal of the Electrochemical Society

Volumn 153, Issue 11, 2006, Pages

  Lee, Ming Kwei ^a   Yen, Chih Feng ^a   Huang, Jung Jie ^a   Lin, Shi Hao ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE STATE DENSITY; POSTMETALLIZATION ANNEALING; VALENCE BAND;

AMMONIUM COMPOUNDS; GRAIN BOUNDARIES; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; TITANIUM DIOXIDE;

THIN FILMS;

EID: 33749639072     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2349360     Document Type: Article

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