Etch mechanisms of hybrid low- k material (SiOCH with porogen) in fluorocarbon based plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 715-720

  Eon, D ^a   Darnon, M ^a   Chevolleau, T ^a   David, T ^a   Vallier, L ^a   Joubert, O ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; INFRARED SPECTROSCOPY; PERMITTIVITY; PLASMAS; POLYMERIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER FILLING; THERMAL ANNEALING; UV CURING;

FLUOROCARBONS;

EID: 34249865340     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2723756     Document Type: Article

References (27)

1. D. Shamiryan, T. Abell, F. Iacopi, and K. Maex, Mater. Today 7, 34 (2004).
2. K. Maex, M. R. Baklanov, D. Shamiryan, F. Iacopi, S. H. Brongersma, and Z. S. Yanovitskaya, J. Appl. Phys. 93, 8793 (2003).
3. J. L. Hedrick, R. D. Miller, C. J. Hawker, K. R. Carter, W. Volksen, D. Y. Yoon, and M. Trollss, Adv. Mater. (Weinheim, Ger.) 10, 1049 (1998).
4. J. M. Park and S. W. Rhee, J. Electrochem. Soc. 149, F92 (2002).
5. V. Rouessac, L. Favennec, B. Ŕmiat, V. Jousseaume, G. Passemard, and J. Durand, Microelectron. Eng. 82, 333 (2005).
6. R. J. O. M. Hoofman, G. J. A. M. Verheijden, J. Michelon, F. Iacopi, Y. Travaly, M. R. Baklanov, Z. Tökei, and G. P. Beyer, Microelectron. Eng. 80, 337 (2005).
7. E. Kondoh, T. Asano, A. Nakashima, and M. Komatu, J. Vac. Sci. Technol. B 18, 1276 (2000).
8. S. Sivoththaman, R. Jeyakumar, L. Ren, and A. Nathan, J. Vac. Sci. Technol. A 20, 1149 (2002).
9. F. Iacopi, et al., J. Appl. Phys. 92, 1548 (2002).
10. M. A. Worsley, S. F. Bent, S. M. Gates, N. C. M. Fuller, W. Volksen, M. Steen, and T. Dalton, J. Vac. Sci. Technol. B 23, 395 (2005).
11. D. Moore, R. Carter, H. Cui, P. Burke, P. McGrath, S. Q. Gu, D. Gidley, and H. Peng, J. Vac. Sci. Technol. B 23, 332 (2005).
12. D. Shamiryan, M. R. Baklanov, S. Vanhaelemeersh, and K. Maex, J. Vac. Sci. Technol. B 20, 1923 (2002).
13. N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and N. Rochat, J. Vac. Sci. Technol. B 22, 2772 (2004).
14. A. Martin Hoyas, J. Schuhmacher, C. M. Whelan, M. R. Baklanov, L. Carbonell, J. P. Celis, and K. Maex, J. Vac. Sci. Technol. B 23, 1551 (2006).
15. R. Caluwaerts, et al., Proceedings of the International Interconnect Technology Conference (IITC), 2003 (unpublished), p. 242.
16. J. M. Calvert and M. Gallagher, European Semiconductor 25, 21 (2003).
17. A. Castex, L. Favennec, V. Jousseaume, J. Bruat, J. Deval, B. Remiat, G. Passemard, and M. Pons, Microelectron. Eng. 82, 416 (2005).
18. V. Jousseaume, L. Favennec, A. Zenasni, and G. Passemard, Appl. Phys. Lett. 88, 182908 (2006).
19. V. Jousseaume, et al., Proceedings of the International Interconnect Technology Conference (IITC), 2005 (unpublished), p. 60.
20. M. Fayolle, et al., Proceedings of ADMETA, 2005 (unpublished), p. 140.
21. D. Fuard, O. Joubert, L. Vallier, M. Assous, P. Berruyer, and R. Blanc, J. Vac. Sci. Technol. B 19, 2223 (2001).
22. M. J. Buie, J. T. P. Pender, and M. Dahimene, J. Vac. Sci. Technol. A 16, 1464 (1998).
23. N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and P. Mangiagalli, J. Vac. Sci. Technol. B 21, 2432 (2003).
24. P. Czuprynski and O. Joubert, J. Vac. Sci. Technol. B 16, 1051 (1998).
25. D. Eon, G. Cartry, V. Fernandez, C. Cardinaud, E. Tegou, V. Bellas, P. Argitis, and E. Gogolides, J. Vac. Sci. Technol. B 22, 2526 (2004).
26. Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, edited by, D. Briggs, and, M. P. Sheah, (Wiley, New York, 1984), Vol. 1, p. 376.
27. J. W. Coburn and M. Chen, J. Appl. Phys. 51, 3134 (1980).