Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1548-1554

  Iacopi, F ^a   Tokei, Zs ^b   Le, Q T ^b   Shamiryan, D ^a   Conard, T ^a   Brijs, B ^a   Kreissig, U ^b   Van Hove, M ^a   Maex, K ^c  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL INTERACTIONS; DEGREE OF CROSS-LINKING; DIELECTRIC MATRIXES; ELLIPSOMETRIC POROSIMETRY; HOMOGENEOUS THIN FILM; INTERFACE REACTIONS; MATERIAL COMPOSITIONS; METAL LAYER; POROSITY AND PORE SIZE; POROUS FILM; POROUS LOW-K DIELECTRICS; POROUS SUBSTRATES; THIN-FILM DEPOSITIONS;

ATOMIC FORCE MICROSCOPY; CROSSLINKING; DEPOSITION; DIELECTRIC MATERIALS; FILM THICKNESS; PHOTOELECTRONS; PORE SIZE; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

TANTALUM;

EID: 0036677392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1487907     Document Type: Article

References (30)

1. International Technology Roadmap for Semiconductors (ITRS), Semicond. Industry Asso., update 2001.
2. S. P. Murarka, Mater. Sci. Eng., R. 19, 87 (1997). msr MIGIEA 0927-796X
3. Y. Shacham-Diamand and A. Dedhia, J. Electrochem. Soc. 140, 2427 (1993); jes JESOAN 0013-4651
4. F. Lanckmans, L. Geenen, S. Arnauts, W. Vandervorst, and K. Maex, J. Vac. Sci. Technol. B (to be published).
5. J.-N. Sun, D. W. Gidley, T. L. Dull, W. E. Frieze, A. F. Yee, E. T. Ryan, S. Lin, and J. Wetzel, J. Appl. Phys. 89, 5138 (2001). jap JAPIAU 0021-8979
6. F. Iacopi, Zs. Tökei, D. Shamiryan, Q. T. Le, S. Malhouitre, M. Van Hove, and K. Maex, Proceedings of the Advanced Metallization Conference (AMC), 9-11 October 2001, Montréal, Canada.
7. D. Shamiryan, M. R. Baklanov, Zs. Tökei, F. Iacopi, and K. Maex, in Ref. 5.
8. Zs. Tökei, J. J. Waeterloos, F. Iacopi, R. Caluwaerts, H. Struyf, J. Van Aelst, and K. Maex, in Ref. 5.
9. M. J. Loboda and G. A. Toskey, Solid State Technol. 41, 99 (1998); ste SSTEAP 0038-111X
10. M. G. Albrecht and C. Blanchette, J. Electrochem. Soc. 145, 4019 (1998). jes JESOAN 0013-4651
11. S. Moyer, K. Chung, M. Spaulding, T. Deis, R. Boisvert, C. Saha, and J. Bremmer, Proceedings of the International Interconnects Technology Conference (IITC), 1999, pp. 196-197;
12. R. A. Donaton et al., International Interconnects Technology Conference (IITC), 2000, p. 93;
13. C. Jin and J. Wetzel, ibid., p. 99;
14. F. Iacopi et al., Proceedings of the Advanced Metallization Conference (AMC) 2000 (Materials Research Society Pittsburgh, 2001), pp. 287-299.
15. F. N. Dultsev and M. R. Baklanov, Electrochem. Solid-State Lett. 2, 192 (1999); 8sw ESLEF6 1099-0062
16. M. R. Baklanov, K. P. Mogilnikov, V. G. Polovinkin, and F. N. Dultsev, J. Vac. Sci. Technol. B 18, 1385 (2000). jvb JVTBD9 0734-211X
17. U. Kreissig, S. Grigull, K. Lange, P. Nitzsche, and B. Schmidt, Nucl. Instrum. Methods Phys. Res. B 138, 674 (1998). nib NIMBEU 0168-583X
18. F. Iacopi, M. R. Baklanov, E. Sleeckx, T. Conard, H. Bender, H. Meynen, and K. Maex, J. Vac. Sci. Technol. B 20, 109 (2002). jvb JVTBD9 0734-211X
19. K. P. Mogilnikov (private communications).
20. F. M. Smits, Bell Syst. Tech. J. 37, 371 (1958). bst BSTJAN 0005-8580
21. Y. Zeng, S. W. Russell, A. J. McKerrow, L. Chen, and T. L. Alford, J. Vac. Sci. Technol. B 18, 221 (2000). jvb JVTBD9 0734-211X
22. G. R. Yang, Y. P. Zhao, B. Wang, E. Barnat, J. McDonald, and T. M. Lu, Appl. Phys. Lett. 72, 1846 (1998); apl APPLAB 0003-6951
23. J. W. Nah, W. S. Choi, S. K. Hwang, and C. M. Lee, Surf. Coat. Technol. 123, 1 (2000); sct SCTEEJ 0257-8972
24. T. Hara, K. Sakamoto, F. Togoh, H. Yang, and D. R. Evans, Jpn. J. Appl. Phys., Part 2 39, L506 (2000); jjc JAPLD8 0021-4922
25. J. Kelber, in Ref. 5.
26. K. W. Gerstenberg and M. Grischke, J. Appl. Phys. 69, 736 (1991). jap JAPIAU 0021-8979
27. National Institute of Standards and Technology, Standard Reference Data Program (2001).
28. M. H. Tsai, S. C. Sun, H. T. Chiu, C. E. Tsai, and S. H. Chuang, Appl. Phys. Lett. 67, 1128 (1995). apl APPLAB 0003-6951
29. R. Teghil, L. D'Alessio, M. Zaccagnino, D. Ferro, V. Marotta, and G. De Maria, Appl. Surf. Sci. 173, 233 (2001); asu ASUSEE 0169-4332
30. R. Teghil, L. D'Alessio, G. De Maria, and D. Ferro, 86, 190 (1995). asu ASUSEE 0169-4332