Etch mechanisms of low dielectric constant polymers in high density plasmas: Impact of charging effects on profile distortion during the etching process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2223-2230

  Fuard, D ^a   Joubert, O ^a   Vallier, L ^a   Assous, M ^a   Berruyer, P ^a   Blanc, R ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DEFORMATION; DIELECTRIC MATERIALS; ELECTRON BEAMS; HYDROCARBONS; INDUCTIVELY COUPLED PLASMA; IONS; MASKS; PLASMA DENSITY; POLYMERS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

BOW FORMATION; CHARGING EFFECTS; HIGH ASPECT RATIO POLYMER CONTACT HOLES; ION DEFLECTION; LOW DIELECTRIC CONSTANT POLYMERS; PROFILE CONTROL; PROFILE DISTORTION;

PLASMA ETCHING;

EID: 0035519150     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1420492     Document Type: Article

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