Interplay of Ga vacancies, C impurities and yellow luminescence in GaN

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6473, Issue , 2007, Pages

  Reurings, F ^a   Tuomisto, F ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Carbon impurity; Gallium nitride; Gallium vacancy; Photoluminescence; Positron annihilation spectroscopy; Yellow luminescence

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; POSITRON ANNIHILATION SPECTROSCOPY; VACANCIES;

CARBON CONTENT; CARBON IMPURITIES; GALLIUM VACANCY; YELLOW LUMINESCENCE;

GALLIUM NITRIDE;

EID: 34249300145     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.698980     Document Type: Conference Paper

References (39)

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