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Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 16, 2005, Pages

Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy

(5) Hautakangas, S a Saarinen, K a Liszkay, L b,d Freitas Jr , J A c Henry, R L c

a AALTO UNIVERSITY (Finland)

b BUNDESWEHR UNIVERSITY MUNICH (Germany)

c NAVAL RESEARCH LABORATORY (United States)

d WIGNER RESEARCH CENTRE FOR PHYSICS (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29644447454 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.72.165303 Document Type: Article

Times cited : (43)

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