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Volumn 892, Issue , 2006, Pages 593-598

Photoluminescence in wurtzite GaN containing carbon

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACQUISITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING;

EID: 33646413154     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (16)
  • 9
    • 33646392571 scopus 로고    scopus 로고
    • The SIMS data were provided by S-P. Gao (EMCORE)
    • The SIMS data were provided by S-P. Gao (EMCORE).
  • 10
    • 33646397412 scopus 로고    scopus 로고
    • The electrical properties were provided by D. C. Look and Z.-Q. Fang (Wright State University)
    • The electrical properties were provided by D. C. Look and Z.-Q. Fang (Wright State University).
  • 14
    • 33646416763 scopus 로고    scopus 로고
    • High quantum efficiency of photoluminescence in GaN and ZnO
    • the Fall 2005 MRS meeting. To be published
    • M. A. Reshchikov, X. Gu, B. Nemeth, J. Nause, and H. Morkoç, High quantum efficiency of photoluminescence in GaN and ZnO, the Fall 2005 MRS meeting. To be published in Mat. Res. Soc. Symp. Proc. 892, FF23.12 (2006).
    • (2006) Mat. Res. Soc. Symp. Proc. , vol.892
    • Reshchikov, M.A.1    Gu, X.2    Nemeth, B.3    Nause, J.4    Morkoç, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.