Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 771-777

  von Haartman, M ^a   Malm, B G ^a   Hellstrom P E ^a   Ostling M ^a   Grasby, T J ^b   Whall, T E ^b   Parker, E H C ^b   Lyutovich, K ^c   Oehme, M ^c   Kasper, E ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

1 f Noise; Channel orientation; Low frequency noise; Mobility; MOSFET; SiGe virtual substrates; Strained Si

Indexed keywords

CARRIER MOBILITY; SILICON; SPURIOUS SIGNAL NOISE; STRAIN RELAXATION; SUBSTRATES; TENSILE STRAIN;

CHANNEL ORIENTATION; LOW FREQUENCY NOISE; SIGE VIRTUAL SUBSTRATES; VIRTUAL SUBSTRATES;

MOSFET DEVICES;

EID: 34248550431     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.03.011     Document Type: Article

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