Can 1/f noise in MOSFETs be reduced by gate oxide and channel optimization?

AIP Conference Proceedings

Volumn 780, Issue , 2005, Pages 195-198

  Marin, M ^a   Vildeuil, J C ^a   Tavel, B ^b   Duriez, B ^b   Arnaud, F ^a   Stolk, P ^b   Woo, M ^c  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

1 f noise; MOSFET; Nitridation; Substrate orientation

Indexed keywords

EID: 33749465056     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036730     Document Type: Conference Paper

References (5)

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2. D. K. Schroder et al., Journal of Applied Physics, Vol. 94, 2003
3. B. Tavel et al. Proceedings of VLSI conference, 2003
4. M. Bidaud et al., Proceedings of ESSDERC conference, 2002
5. T. Komoda et al., Proceedings of the IEDM Conference, pp 217- 220, 2004