Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  El Oulachgar, Hassane ^a   Aktik, Cetin ^a   Scarlete, Mihai ^b   Dostie, Starr ^b   Sowerby, Rob ^b   Gujrathi, Subhash ^c  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b BISHOP'S UNIVERSITY   (Canada)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; MOS DEVICES; REFRACTIVE INDEX; SILICON COMPOUNDS; THIN FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY;

ATOMIC CONCENTRATION; DIELECTRIC THIN FILMS; OPTICAL CHARACTERIZATION; ORGANOSILANE;

DIELECTRIC FILMS;

EID: 34247891651     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717607     Document Type: Conference Paper

References (24)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 10.1063/1.1361065 89, 5243 (2001).
2. K. Maex, M. R. Baklanov, D. Shamiryan, F. Iacopi, S. H. Brongersma, and Z. S. Yanovitskaya, J. Appl. Phys. 0021-8979 10.1063/1.1567460 93, 8793 (2003).
3. M. Togo, K. Watanabe, T. Yamamoto, N. Ikarashi, T. Tatsumi, H. Ono, and T. Mogami, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2002.804695 49, 1903 (2002).
4. X. Guo and T. P. Ma, IEEE Electron Device Lett. 0741-3106 10.1109/55.678546 19, 207 (1998).
5. K. Muraoka, K. Kurihara, N. Yasuda, and H. Satake, J. Appl. Phys. 94, 2038 (2003).
6. T. Yang, C. Shen, M. F. Li, C. H. Ang, C. X. Zhu, Y. -C. Yeo, G. Samudra, and D. L. Kwong, IEEE Electron Device Lett. 26, 758 (2005).
7. S. J. Rhee, F. Zhu, H. S. Kim, C. Y. Kang, C. H. Choi, M. H. Zhang, T. Lee, I. Ok, S. A. Krishnan, and J. C. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2192646 88, 153515 (2006).
8. S. J. Wrazien, Y. Zhao, J. D. Krayer, and M. H. White, Solid-State Electron. 0038-1101 10.1016/S0038-1101(02)00448-3 47, 885 (2003).
9. G. L. Bona, R. Germann and B. J. Offrein, IBM J. Res. Dev. 47, 126 (2003).
10. M. I. Alayo, D. Criado, M. N. P. Carreno, and I. Pereyra, Mater. Sci. Eng. B 112, 154 (2004). 0921-5107
11. K. Takatsuji, M. Kawakami, Y. Makita, K. Murakami, H. Nakayama, Y. Miura, N. Shimoyama, and H. Machida, Thin Solid Films 430, 116 (2003).
12. C. C. Chiang, I. H. Ko, M. C. Chen, Z. C. Wu, Y. C. Lu, S. M. Jang, and M. S. Liang, J. Electrochem. Soc. 0013-4651 10.1149/1.1777510 151, G606 (2004).
13. S. Martic, J. Campbell, M. Bercu, C. Aktik, and M. Scarlete, Can. J. Anal. Sci. Spectrosc. 48, 77 (2003).
14. M. Scarlete and C. Aktik, U.S. Patent No. 20050139966-A1 (2005).
15. E. H. Oulachgar, C. Aktik, S. Dostie, R. Sowerby, S. Gujrathi, and M. Scarlete, J. Electrochem. Soc. 0013-4651 10.1149/1.2338664 153, F255 (2006).
16. E. H. Nicollian and J. R. Brews, MOS (Metal oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
17. H. Wong and V. A. Gritsenko, Microelectron. Reliab. 0026-2714 10.1016/S0026-2714(02)00005-7 42, 597 (2002).
18. W. A. Hill and C. C. Coleman, Solid-State Electron. 0038-1101 10.1016/0038-1101(80)90064-7 23, 987 (1980).
19. K. Muraoka and K. Kurihara, J. Electrochem. Soc. 0013-4651 10.1149/1.1461380 149, F23 (2002).
20. J. Y. Kim, M. S. Hwang, Y. H. Kim, H. J. Kim, and Y. Lee, J. Appl. Phys. 0021-8979 10.1063/1.1388861 90, 2469 (2001).
21. X. Tan, J. Wojcik, and P. Mascher, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1752898 22, 1115 (2004).
22. S. Kohli, J. A. Theilb, P. C. Dippoc, R. K. Ahrenkielc, C. D. Rithnera, and P. K. Dorhouta, Thin Solid Films 473, 89 (2005).
23. H. Wong and V. A. Gritsenko, Microelectron. Reliab. 0026-2714 10.1016/S0026-2714(02)00005-7 42, 597 (2002).
24. J. Tauc and A. Menth, J. Non-Cryst. Solids 8-10, 569 (1972). 0022-3093