Chemical and structural characterization of SiONC dielectric thin film deposited by PSCVD

Journal of the Electrochemical Society

Volumn 153, Issue 11, 2006, Pages

  Oulachgar, E H ^a   Aktik, C ^a   Dostie, S ^b   Sowerby, R ^b   Gujrathi, S ^c   Scarlete, M ^b  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b BISHOP'S UNIVERSITY   (Canada)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONCENTRATION; POLYMER-SOURCE CHEMICAL VAPOR DEPOSITION (PSCVD); SURFACE LAYERS;

CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OPTICAL WAVEGUIDES; SILANES; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 33749621085     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2338664     Document Type: Article

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