Characterization of Cat-CVD grown Si-C and Si-C-O dielectric films for ULSI applications

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 116-119

  Takatsuji, K ^a   Kawakami, M ^a   Makita, Y ^a   Murakami, K ^a   Nakayama, H ^a   Miura, Y ^a   Shimoyama, N ^b   Machida, H ^b  

^a Osaka Prefecture University   (Japan)

^b TRI Chemical Laboratory Inc   (Japan)

Author keywords

Cat CVD; Multiplayer interconnection; SiOC; TEOS

Indexed keywords

PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SENSITIVITY ANALYSIS; SILANES; TERNARY SYSTEMS; ULSI CIRCUITS;

MULTIPLAYER INTERCONNECTION;

DIELECTRIC FILMS;

EID: 0037809514     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00087-7     Document Type: Conference Paper

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