Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: Implications for GaN layer transfer applications

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 418-421

  Singh, R ^a   Radu, I ^a   Bruederl, G ^b   Eichler, C ^b   Haerle, V ^b   Gosele U ^a   Christiansen, S H ^a,c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^c MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HYDROGEN; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); HYDROGEN IMPLANTATION; LAYER SPLITTING;

SUBSTRATES;

EID: 34047229255     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/022     Document Type: Article

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