Evolution of mechanical strain and extended defects in annealed (1 0 0) silicon samples implanted with Ge+ ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 140, Issue 1-2, 1998, Pages 91-98

  Suprun Belevich, Yu ^a,b   Cristiano, F ^b   Nejim, A ^b   Hemment, P L F ^b   Sealy, B J ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Defects; Implantation; Silicon; Strain

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING GERMANIUM; SILICON; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

INTERNAL MECHANICAL STRAIN EVOLUTION;

ION IMPLANTATION;

EID: 0032050821     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00928-2     Document Type: Article

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