Transfers of 2-inch GaN films onto sapphire substrates using Smart Cut™ technology

Electronics Letters

Volumn 41, Issue 11, 2005, Pages 668-670

  Tauzin, A ^a   Akatsu, T ^b   Rabarot, M ^a   Dechamp, J ^a   Zussy, M ^a   Monceau, H ^a   Michaud, J F ^a   Charvet, A M ^a   Di Cioccio, L ^a   Fournel, F ^a   Garrione, J ^b   Faure, B ^b   Letertre, F ^b   Kernevez, N ^a  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; HIGH TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL WAFERS; SAPPHIRE SUBSTRATES; SMART CUT TECHNOLOGY; WAFER TRANSFERS;

THIN FILMS;

EID: 20344384040     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051038     Document Type: Article

References (7)

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