Dynamic annealing in III-nitrides under ion bombardment

Journal of Applied Physics

Volumn 95, Issue 6, 2004, Pages 3048-3054

  Kucheyev, S O ^a,b   Williams, J S ^a   Zou, J ^c,d   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF QUEENSLAND   (Australia)

^d UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNELING SPECTROMETRY; LATTICE DISORDER;

ALUMINUM; ALUMINUM COMPOUNDS; AMORPHIZATION; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; FREE ENERGY; HEAVY IONS; ION BOMBARDMENT; ION IMPLANTATION; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 1842531003     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1649459     Document Type: Article

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