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Volumn 48, Issue 3, 2005, Pages 43-48

UV-assisted processing for advanced dielectric films

Author keywords

[No Author keywords available]

Indexed keywords

FILM-MODIFICATION; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); THERMAL BUDGET; ULTRAVIOLET-ASSISTED THERMAL PROCESSING (UVTP);

EID: 15844398635     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review
Times cited : (5)

References (6)
  • 1
    • 3242671509 scopus 로고    scopus 로고
    • A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
    • T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, et al., "A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors," IEDM Tech. Dig., 2003.
    • (2003) IEDM Tech. Dig.
    • Ghani, T.1    Armstrong, M.2    Auth, C.3    Bost, M.4    Charvat, P.5
  • 4
    • 0344084185 scopus 로고    scopus 로고
    • Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
    • A. Grill, D.A. Neumayer, "Structure of Low Dielectric Constant to Extreme Low Dielectric Constant SiCOH Films: Fourier Transform Infrared Spectroscopy Characterization," J. Appl. Phys., Vol. 94, p. 6697, 2003.
    • (2003) J. Appl. Phys. , vol.94 , pp. 6697
    • Grill, A.1    Neumayer, D.A.2
  • 5
    • 0348199056 scopus 로고    scopus 로고
    • Plasma enhanced chemical vapor deposition of porous organosilicate glass ILD films with k < 2.4
    • R.N. Vrtis, M.L. O'Neill, J.L. Vicent, A.S. Lukas, B.K. Peterson, et al., "Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k < 2.4," Proc. MRS Symp., Vol. 766, p. 259, 2003.
    • (2003) Proc. MRS Symp. , vol.766 , pp. 259
    • Vrtis, R.N.1    O'Neill, M.L.2    Vicent, J.L.3    Lukas, A.S.4    Peterson, B.K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.