FTIR study of porous low dielectric constant SiOC film under various post-deposition curing conditions

ECS Transactions

Volumn 1, Issue 11, 2006, Pages 177-184

  Lagha, A ^a,d   Sardo, M ^a   Humbert, A ^b,e   Desbois, M ^b   Laurent, N ^c  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c Accent Optical Technologies   (France)

^d FREESCALE SEMICONDUCTOR INC   (United States)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; POROSITY; POROUS MATERIALS; SILANES;

CURING CHAMBERS; POST-DEPOSITION CURING; SIOC FILMS;

THIN FILMS;

EID: 33846820479     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2218490     Document Type: Conference Paper

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