Interconnect lifetime prediction for reliability-aware systems

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 15, Issue 2, 2007, Pages 159-172

  Lu, Zhijian ^a,b,c   Huang, Wei ^a,b   Stan, Mircea R ^a,b   Skadron, Kevin ^a,b   Lach, John ^a,b  

^a IEEE   (United States)

^b University of Virginia   (United States)

^c MARVELL SEMICONDUCTOR INC   (United States)

Author keywords

Dynamic reliability management (DRM); Dynamic stress; Dynamic thermal management (DTM); Electromigration (EM); Reliability aware design; Temperature gradients

Indexed keywords

DYNAMIC RELIABILITY MANAGEMENT (DRM); DYNAMIC STRESS; DYNAMIC THERMAL MANAGEMENT (DTM); ELECTROMIGRATION (EM); RELIABILITY-AWARE DESIGN;

CURRENT DENSITY; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; RELIABILITY THEORY; THERMAL EFFECTS; THERMAL GRADIENTS;

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 34047112260     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2007.893578     Document Type: Article

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