Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 220-221

  Wachnik, R A ^a   Filippi, R G ^a   Shaw, T M ^a   Lin, P C ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROMIGRATION; SEMICONDUCTOR DEVICE MODELS;

ELECTROMIGRATION RESISTANT POWER GRID;

SEMICONDUCTOR DEVICE TESTING;

EID: 0033683098     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)