Effect of thermal gradients on the electromigration lifetime in power electronics

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 619-620

  Nguyen, H V ^a   Salm, C ^a   Krabbenborg, B ^b   Weide Zaage, K ^c   Bisschop, J ^b   Mouthaan, A J ^a   Kuper, F G ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c Lab für Informationstechnol   (Germany)

Author keywords

Electromigration; Fast thermal stressing; Power electronics; Thermomigration

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTROMIGRATION; FINITE ELEMENT METHOD; HEATING; INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS; POLYSILICON; RESISTORS; THERMAL GRADIENTS;

BLACKS EQUATION; ELECTROMIGRATION INDUCED FAILURES; FAST THERMAL STRESSING; THERMOMIGRATION;

POWER ELECTRONICS;

EID: 3042522547     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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