Statistical analysis of electromigratlon lifetimes and void evolution for Cu interconnects

Materials Research Society Symposium Proceedings

Volumn 812, Issue , 2004, Pages 379-384

  Hauschildt, M ^a   Gall, M ^b   Thrasher, S ^b   Justison, P ^b   Michaelson, L ^b   Hernandez, R ^b   Kawasaki, H ^b   Ho, P S ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM (FIB) MICROSCOPY; GRAIN ORIENTATIONS; VOID FORMATION; VOID SIZE;

ACTIVATION ENERGY; ASYMPTOTIC STABILITY; CATHODES; COMPUTER SIMULATION; COPPER; DIELECTRIC MATERIALS; DISLOCATIONS (CRYSTALS); FAILURE ANALYSIS; GRAIN BOUNDARIES; INTERCONNECTION NETWORKS; ION BEAMS; SILICA; STATISTICAL METHODS;

ELECTROMIGRATION;

EID: 12844255745     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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