Dual-acceptor p-type behaviour in ZnO films grown by plasma-assisted metalorganic chemical vapour deposition

Journal of Physics D: Applied Physics

Volumn 40, Issue 6, 2007, Pages 1807-1810

  Zeng, Y J ^a   Ye, Z Z ^a   Lu, Y F ^a   Lu, J G ^a   Xu, W Z ^a   Zhu, L P ^a   Zhao, B H ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; VALENCE BANDS; ZINC OXIDE;

ACCEPTOR STATES; ZINC VACANCIES;

THIN FILMS;

EID: 33947652170     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/6/031     Document Type: Article

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