Investigation into the scalability of selectively implanted buried subcollector (SIBS) for submicrometer InP DHBTs

IEEE Transactions on Electron Devices

Volumn 54, Issue 3, 2007, Pages 398-409

  Li, James Chingwei ^a,b   Royter, Yakov ^b   Hussain, Tahir ^b   Chen, Mary Y ^b   Fields, Charles H ^b   Rajavel, Rajesh D ^b   Bui, Steven S ^b   Shi, Binqiang ^b   Hitko, Donald A ^b   Chow, David H ^b   Asbeck, Peter M ^a   Sokolich, Marko ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Bipolar transistors; Heterojunction bipolar transistors (HBTs); Indium compounds; Ion implantation; Semiconductor device measurements

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; INDIUM PHOSPHIDE; ION IMPLANTATION; MICROMETERS; SEMICONDUCTOR DOPING;

GEOMETRY VARIATIONS; SELECTIVELY IMPLANTED BURIED SUBCOLLECTOR (SIBS); SUBMICROMETER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33947647348     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.890370     Document Type: Article

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